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PD - 97355B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
* * * * * * * * * * Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 S short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
C
IRGS4062DPbF IRGSL4062DPBF
VCES = 600V IC = 24A, TC = 100C
G E
tSC 5s, TJ(max) = 175C
n-channel
C
VCE(on) typ. = 1.65V
C
Benefits
* High Efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses * Rugged transient Performance for increased reliability * Excellent Current sharing in parallel operation * Low EMI
E G G C E
D2 Pak IRGS4062DPbF
TO-262 IRGSL4062DPBF
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Max.
600 48 24 96 96 48 24 96 20 30 250 125 -55 to +175
Units
V
c d
A
Continuous Gate-to-Emitter Voltage
V W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
--- --- --- ---
Typ.
--- --- 0.50 80
Max.
0.60 1.53 --- ---
Units
C/W
1
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12/07/09
IRGS/SL4062DPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- 4.0 -- -- -- -- -- -- --
Typ.
-- 0.30 1.60 2.03 2.04 -- -18 17 2.0 775 1.80 1.28 --
Max. Units
-- -- 1.95 -- -- 6.5 -- -- 25 -- 2.6 -- 100 nA V V S A V
Conditions
VGE = 0V, IC = 100A
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
Ref.Fig CT6 CT6 5,6,7 9,10,11
V/C VGE = 0V, IC = 1mA (25C-175C) IC = 24A, VGE = 15V, TJ = 25C V IC = 24A, VGE = 15V, TJ = 150C IC = 24A, VGE = 15V, TJ = 175C VCE = VGE, IC = 700A VCE = 50V, IC = 24A, PW = 80s VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175C IF = 24A IF = 24A, TJ = 175C VGE = 20V
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
9, 10, 11, 12
mV/C VCE = VGE, IC = 1.0mA (25C - 175C)
gfe ICES VFM IGES
8
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
50 13 21 115 600 715 41 22 104 29 420 840 1260 40 24 125 39 1490 129 45
Max. Units
75 20 31 201 700 901 53 31 115 41 -- -- -- -- -- -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 24A VGE = 15V VCC = 400V
Conditions
Ref.Fig 24 CT1
IC = 24A, VCC = 400V, VGE = 15V RG = 10, L = 200H, LS = 150nH, TJ = 25C
Energy losses include tail & diode reverse recovery
CT4
IC = 24A, VCC = 400V, VGE = 15V RG = 10, L = 200H, LS = 150nH, TJ = 25C
CT4
IC = 24A, VCC = 400V, VGE=15V RG=10, L=100H, LS=150nH, TJ = 175C IC = 24A, VCC = 400V, VGE = 15V RG = 10, L = 200H, LS = 150nH TJ = 175C
eA
13, 15 CT4 WF1, WF2 14, 16 CT4 WF1 WF2 23
Energy losses include tail & diode reverse recovery
f = 1.0Mhz TJ = 175C, IC = 96A VCC = 480V, Vp =600V Rg = 10, VGE = +15V to 0V
4 CT2
FULL SQUARE 5 -- -- -- -- 621 89 37 -- -- -- -- s J ns A
VCC = 400V, Vp =600V Rg = 10, VGE = +15V to 0V TJ = 175C VCC = 400V, IF = 24A VGE = 15V, Rg = 10, L =200H, Ls = 150nH
22, CT3 WF4 17, 18, 19 20, 21
WF3
Notes: VCC = 80% (VCES), VGE = 20V, L = 100H, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGS/SL4062DPbF
50 45 40 35
Ptot (W)
250 200 150 100 50 0 300
30
IC (A)
25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 T C (C)
0
20
40
60
80 100 120 140 160 180 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100
100
10sec
IC (A)
10 100sec 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 VCE (V) 1000 10000 1msec DC
IC (A)
10
1 10 100 VCE (V) 1000
Fig. 3 - Forward SOA TC = 25C, TJ 175C; VGE =15V
90 80 70 60 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 90 80 70 60
Fig. 4 - Reverse Bias SOA TJ = 175C; VGE =15V
ICE (A)
ICE (A)
50 40 30 20 10 0 0 1 2 3 4 VCE (V) 5
50 40 30 20 10 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
6
7
8
0
1
2
3
4 VCE (V)
5
6
7
8
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
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3
IRGS/SL4062DPbF
90 80 70 60 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
120 100 80 -40c 25C 175C
ICE (A)
IF (A)
50 40 30 20 10 0 0 1 2 3 4 VCE (V) 5 6 7 8
60 40 20 0 0.0
1.0 VF (V)
2.0
3.0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 175C; tp = 80s
20 18 16 14
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
20 18 16 14
VCE (V)
10 8 6 4 2 0 5 10 VGE (V)
ICE = 24A ICE = 48A
VCE (V)
12
ICE = 12A
12 10 8 6 4 2 0
ICE = 12A ICE = 24A ICE = 48A
15
20
5
10 VGE (V)
15
20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
20 18 16 14
VCE (V)
ICE (A)
100 80 120
Fig. 10 - Typical VCE vs. VGE TJ = 25C
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 12A
T J = 25C TJ = 175C
ICE = 24A ICE = 48A
60 40 20 0
15
20
0
5 VGE (V)
10
15
Fig. 11 - Typical VCE vs. VGE TJ = 175C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
4
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IRGS/SL4062DPbF
1800 1600 1400 1200
Swiching Time (ns)
tdOFF 1000
Energy (J)
1000 800 600 400 200 0 0 10
EOFF
100 tdON tF 10 tR
EON
1
20
30 IC (A)
40
50
60
10
20
30 IC (A)
40
50
Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
1600 1400 1200 EON EOFF
Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
1000
Energy (J)
1000 800 600 400 200 0 0 25
Swiching Time (ns)
tdOFF
100 tdON tF tR 10
50
75
100
125
0
25
50
75
100
125
Rg ()
RG ()
Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 24A; VGE = 15V
40 RG = 10 35 30
Fig. 16 - Typ. Switching Time vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 24A; VGE = 15V
45 40 35
IRR (A)
25 20 15 10 0 10 20 30 IF (A) 40 50 60 RG = 47 RG = 100
IRR (A)
RG = 22
30 25 20 15 10 5 0 25 50 75 100 125 RG ()
Fig. 17 - Typ. Diode IRR vs. IF TJ = 175C
Fig. 18 - Typ. Diode IRR vs. RG TJ = 175C
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5
IRGS/SL4062DPbF
45 40 35
4000 3500 3000 48A 10 22 2500 2000 1500 12A 1000 500 0 500 1000 1500 diF /dt (A/s) 100 47 24A
30 25 20 15 10 5 0 500 1000 1500 diF /dt (A/s)
Q RR (C)
IRR (A)
Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 24A; TJ = 175C
Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175C
16 14 280 240 200
1000
800 RG = 10 RG = 22 400 RG = 47
12
Energy (J)
Current (A)
Time (s)
600
10 8
160 120 80 40 8 10 12 14 16 18 VGE (V)
RG = 100
200
6 4
0 10 20 30 IF (A) 40 50 60
0
10000
Fig. 21 - Typ. Diode ERR vs. IF TJ = 175C
Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25C
16
VGE, Gate-to-Emitter Voltage (V)
14 12 10 8 6 4 2 0
V CES = 300V V CES = 400V
Capacitance (pF)
1000
Cies
100
Coes
Cres 10 0 20 40 60 80 100 VCE (V)
0
5 10 15 20 25 30 35 40 45 50 55 Q G, Total Gate Charge (nC)
Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE ICE = 24A; L = 600H
6
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IRGS/SL4062DPbF
1 D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 C 1 2
0.01
0.02 0.01
J
Ri (C/W) i (sec) 0.2329 0.000234 0.3631 0.007009
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
0.1
R1 R1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.476 0.000763 0.647 0.406 0.003028 0.023686
0.01
1
2
Ci= i/Ri Ci i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1
0.0001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGS/SL4062DPbF
L
L
0
D UT 1K
VC C
80 V Rg
DU T
4 80V
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
d io d e clamp / DU T
L
4x
DC
VCC 360V
- 5V DU T / D RIVER
Rg
DUT
VCC
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC ICM
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
8
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IRGS/SL4062DPbF
600 tf 500
90% ICE
30 25 20
ICE V CE
600 500 400 300 200
10% ICE V CE C
60 50 tr 40
ICE C 90% test
400 300 200 100
5% ICE
VCE (V)
5% V CE
10 5 0 -5
VCE (V)
15
30 20 10 0
100 0 EON -100 11.70 11.90 12.10
5% V CE
0 -100 -0.40
EOFF Loss 0.10 Time(s) 0.60
-10 12.30
Time (s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4
30 20 10 0 QRR
600 500
tRR
300 ICE 250 200 V CE 150 100 50 0 -50 10.00
400 300 200 100 0 -100 -5.00
VCE (V)
IRR (A)
-10 -20 -30 -40 -50 -0.15
Peak IRR
10% Peak IRR
-0.05
0.05 time (S)
0.15
0.25
0.00
5.00
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175C using Fig. CT.4
time (S) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25C using Fig. CT.3
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ICE (A)
9
IRGS/SL4062DPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ A$"T
Q6SUAIVH7@S 96U@A8P9@ QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G @6SAA2A! X@@FA! 6A2A6TT@H7GATDU@A8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
10
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IRGS/SL4062DPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
@Y6HQG@) UCDTADTA6IADSG" "G GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G @6SA&A2A ((& X@@FA ( 6A2A6TT@H7GATDU@A8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
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11
IRGS/SL4062DPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/2009
12
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